The Effect of Thermal Reduction on the Photoluminescence and Electronic Structures of Graphene Oxides

نویسندگان

  • C.-H. Chuang
  • Y.-F. Wang
  • Y.-C. Shao
  • Y.-C. Yeh
  • D.-Y. Wang
  • C.-W. Chen
  • J. W. Chiou
  • Sekhar C. Ray
  • W. F. Pong
  • L. Zhang
  • J. F. Zhu
  • J. H. Guo
چکیده

Electronic structures of graphene oxide (GO) and hydro-thermally reduced graphene oxides (rGOs) processed at low temperatures (120-180°C) were studied using X-ray absorption near-edge structure (XANES), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS). C K-edge XANES spectra of rGOs reveal that thermal reduction restores C = C sp(2) bonds and removes some of the oxygen and hydroxyl groups of GO, which initiates the evolution of carbonaceous species. The combination of C K-edge XANES and Kα XES spectra shows that the overlapping π and π* orbitals in rGOs and GO are similar to that of highly ordered pyrolytic graphite (HOPG), which has no band-gap. C Kα RIXS spectra provide evidence that thermal reduction changes the density of states (DOSs) that is generated in the π-region and/or in the gap between the π and π* levels of the GO and rGOs. Two-dimensional C Kα RIXS mapping of the heavy reduction of rGOs further confirms that the residual oxygen and/or oxygen-containing functional groups modify the π and σ features, which are dispersed by the photon excitation energy. The dispersion behavior near the K point is approximately linear and differs from the parabolic-like dispersion observed in HOPG.

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عنوان ژورنال:

دوره 4  شماره 

صفحات  -

تاریخ انتشار 2014